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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Silicon Carbide Buffer Layers for Nitride Growth...

Silicon Carbide Buffer Layers for Nitride Growth on Si

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1485-1488

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1485

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Online since:

April 2002

Authors:

Pierre M. Masri, Z.G. Herro, Thomas Stauden, Joerg Pezoldt, M. Sumiya, M. Averous

Keywords:

Heteroepitaxy, Interface Optimal Composition, Strained Interfaces

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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