GaN Grown by Hydride - Metal Organic Vapor Phase Epitaxy (H-MOVPE) on Lattice-Matched Oxide and Silicon Substrates

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

1473-1476

DOI:

10.4028/www.scientific.net/MSF.389-393.1473

Citation:

M. A. Mastro et al., "GaN Grown by Hydride - Metal Organic Vapor Phase Epitaxy (H-MOVPE) on Lattice-Matched Oxide and Silicon Substrates", Materials Science Forum, Vols. 389-393, pp. 1473-1476, 2002

Online since:

April 2002

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