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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393GaN Grown by Hydride - Metal Organic Vapor Phase...

GaN Grown by Hydride - Metal Organic Vapor Phase Epitaxy (H-MOVPE) on Lattice-Matched Oxide and Silicon Substrates

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1473-1476

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1473

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Online since:

April 2002

Authors:

Michael E. Mastro, Olga Kryliouk, T. Dann, T.J. Anderson, A.E. Nikolaev, Yu.V. Melnik, Vladimir Dmitriev

Keywords:

GaN Substrates, Hydrides, Lattice-Matched Oxide Substrates, Metal Organic Vapor Phase Epitaxy (H-MOVPE), Silicon

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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