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Crystal Growth of Aluminum Nitride by Sublimation Close Space Technique
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Aluminium Nitride Bulk Crystals by Sublimation Method: Growth and X-Ray Characterization
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Heteroepitaxial Growth of Insulating AlN on 6H-SiC by MBE
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RHEED Studies of In Effect on the N-Polarity GaN Surface Kinetics Modulation in Plasma-Assisted Molecular-Beam Epitaxy
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Surface Morphology of GaN Epilayer with Si_xN_1-x Buffer Layer Grown by Ammonia-source MBE
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Heteroepitaxial Growth of Insulating AlN on 6H-SiC...

Heteroepitaxial Growth of Insulating AlN on 6H-SiC by MBE

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1457-1460

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1457

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Online since:

April 2002

Authors:

Norio Onojima, Jun Suda, Hiroyuki Matsunami

Keywords:

6H-SiC, Aluminum Nitride (AlN), HCl Gas Etching, Insulator, MIS, Molecular Beam Epitaxy

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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