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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Surface Morphology of GaN Epilayer with SixN1-x...

Surface Morphology of GaN Epilayer with Si_xN_1-x Buffer Layer Grown by Ammonia-source MBE

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1465-1468

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1465

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Online since:

April 2002

Authors:

Mitsuaki Shimizu, H. Ohkita, Akira Suzuki, Hajime Okumura

Keywords:

Ammonia Source, Gallium Nitride (GaN), MBE, SiN Buffer Layer

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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