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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393RHEED Studies of In Effect on the N-Polarity GaN...

RHEED Studies of In Effect on the N-Polarity GaN Surface Kinetics Modulation in Plasma-Assisted Molecular-Beam Epitaxy

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1461-1464

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1461

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Online since:

April 2002

Authors:

Xu-Qiang Shen, Toshihide Ide, Mitsuaki Shimizu, Hajime Okumura

Keywords:

Gallium Nitride (GaN), Molecular Beam Epitaxy, N-Polarity, RHEED, Surface Kinetics

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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