RHEED Studies of In Effect on the N-Polarity GaN Surface Kinetics Modulation in Plasma-Assisted Molecular-Beam Epitaxy

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

1461-1464

DOI:

10.4028/www.scientific.net/MSF.389-393.1461

Citation:

X.-Q. Shen et al., "RHEED Studies of In Effect on the N-Polarity GaN Surface Kinetics Modulation in Plasma-Assisted Molecular-Beam Epitaxy", Materials Science Forum, Vols. 389-393, pp. 1461-1464, 2002

Online since:

April 2002

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