Paper Titles

A New Type of SiC Gas Sensor with a pn-Junction Structure
p.1427

Demonstration of 4H-SiC Avalanche Photodiode Linear Array
p.1431

4H-SiC Material for Hall Effect and High-Temperature Sensors Working in Harsh Environments
p.1435

N and p Type 6H-SiC Films for the Creation Diode and Triode Structure of Nuclear Particle Detectors
p.1439

Sublimation Growth of Bulk AlN Crystals: Materials Compatibility and Crystal Quality
p.1445

Crystal Growth of Aluminum Nitride by Sublimation Close Space Technique
p.1449

Aluminium Nitride Bulk Crystals by Sublimation Method: Growth and X-Ray Characterization
p.1453

Heteroepitaxial Growth of Insulating AlN on 6H-SiC by MBE
p.1457

RHEED Studies of In Effect on the N-Polarity GaN Surface Kinetics Modulation in Plasma-Assisted Molecular-Beam Epitaxy
p.1461

HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Sublimation Growth of Bulk AlN Crystals: Materials...

Sublimation Growth of Bulk AlN Crystals: Materials Compatibility and Crystal Quality

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2001

Info:

Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1445-1448

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1445

Citation:

Cite this paper

Online since:

April 2002

Authors:

Boris M. Epelbaum, Dieter Hofmann, Matthias Bickermann, Albrecht Winnacker

Keywords:

AlN Single Crystal, AlN-SiC Mixed Crystals, Bulk Growth, Crucible Material, Sublimation Growth

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: