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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393N and p Type 6H-SiC Films for the Creation Diode...

N and p Type 6H-SiC Films for the Creation Diode and Triode Structure of Nuclear Particle Detectors

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1439-1444

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1439

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Online since:

April 2002

Authors:

Alexander M. Ivanov, Nikita B. Strokan, Alexander A. Lebedev, D.V. Davydov, N.S. Savkina, Elena V. Bogdanova

Keywords:

Alpha-Spectrometry, Amplification, Carrier Transport, Diode Structure, Radiation Hardness, Triode Structure, Vacuum Sublimation Epitaxy

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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