Authors: Anita Lloyd Spetz, Lars Unéus, Henrik Svenningstorp, H. Wingbrant, Chris I. Harris, P. Salomonsson, P. Tengström, P. Mårtensson, P. Ljung, M. Mattsson, J.H. Visser, S.G. Ejakov, D. Kubinski, Lars-G. Ekedahl, Ingemar Lundström, Susan Savage

1415

The Effect of Hydrogen Diffusion in p- and n-Type SiC Schottky Diodes at High Temperatures

Authors: Lars Unéus, Shinji Nakagomi, Margareta K. Linnarsson, Martin S. Janson, Bengt Gunnar Svensson, Rositza Yakimova, Mikael Syväjärvi, Anne Henry, Erik Janzén, Lars-G. Ekedahl, Ingemar Lundström, Anita Lloyd Spetz

1419

Influence of Epitaxial Layer on SiC Schottky Diode Gas Sensors Operated under High-Temperature Conditions

Authors: Shinji Nakagomi, Hiroaki Shinobu, Lars Unéus, Ingemar Lundström, Lars-G. Ekedahl, Rositza Yakimova, Mikael Syväjärvi, Anne Henry, Erik Janzén, Anita Lloyd Spetz

1423

A New Type of SiC Gas Sensor with a pn-Junction Structure

Authors: Kenshiro Nakashima, Yasuo Okuyama, Shinji Ando, Osamu Eryu, Koji Abe, H. Yokoi, T. Oshima

1427

Demonstration of 4H-SiC Avalanche Photodiode Linear Array

Authors: Feng Yan, C. Qin, Jian Hui Zhao, M. Bush, G.H. Olsen

1431

4H-SiC Material for Hall Effect and High-Temperature Sensors Working in Harsh Environments

Authors: Jean-Louis Robert, Sylvie Contreras, Jean Camassel, Julien Pernot, Sandrine Juillaguet, Lea Di Cioccio, Thierry Billon

1435

N and p Type 6H-SiC Films for the Creation Diode and Triode Structure of Nuclear Particle Detectors

Authors: Alexander M. Ivanov, Nikita B. Strokan, Alexander A. Lebedev, D.V. Davydov, N.S. Savkina, Elena V. Bogdanova

1439