Volumes

Materials Science Forum
Vol. 413

Materials Science Forum
Vols. 408-412

Materials Science Forum
Vols. 404-407

Materials Science Forum
Vol. 403

Materials Science Forum
Vols. 396-402

Materials Science Forum
Vols. 394-395

Materials Science Forum
Vols. 389-393

Materials Science Forum
Vols. 386-388

Materials Science Forum
Vols. 384-385

Materials Science Forum
Vol. 383

Materials Science Forum
Vol. 382

Materials Science Forum
Vols. 378-381

Materials Science Forum
Vol. 377

HomeMaterials Science ForumMaterials Science Forum Vols. 389-393

Materials Science Forum Vols. 389-393

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393

Export:

ToC:

Table of Contents

Paper Title Page

Microstructural Characterization of Recombination-Induced Stacking Faults in High-Voltage SiC Diodes

Authors: Jin Qiang Liu, Marek Skowronski, Christer Hallin, R. Söderholm, H. Lendenmann

1281

Electrical Characterization of High-Voltage 4H-SiC Diodes on High-Temperature CVD-Grown Epitaxial Layers

Authors: Uwe Zimmermann, John Österman, Jie Zhang, Anne Henry, Anders Hallén

1285

Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization

Authors: K. Isoird, Mihai Lazar, Marie Laure Locatelli, Christophe Raynaud, Dominique Planson, Jean-Pierre Chante

1289

Photon Emission Analysis of Defect-Free 4H-SiC pn Diodes in Avalanche Regime

Authors: C. Banc, Edwige Bano, Thierry Ouisse, Konstantin Vassilevski, Konstantinos Zekentes

1293

Electroluminescence Analysis of Al⁺ and B⁺ Implanted pn Diodes

Authors: Hiroyuki Fujisawa, Takashi Tsuji, Syunsuke Izumi, Katsunori Ueno, Isaho Kamata, T. Tsuchida, Tamotsu Jikimoto, Kunikaza Izumi

1297

An Effective High-Voltage Termination for SiC Planar pn Junctions for Use in High-Voltage Devices and UV Detectors

Authors: Gheorghe Brezeanu, M. Badila, Philippe Godignon, José Millan, F. Udrea, Andrej Mihaila, G. Amaratunga

1301

A Novel Technology for the Formation of a Very Small Bevel Angle for Edge Termination

Authors: Feng Yan, C. Qin, Jian Hui Zhao, M. Weiner

1305

The Deep Boron Level in High-Voltage PiN Diodes

Authors: W. Stadler, Anders Hallén, John Österman, Uwe Zimmermann, Bengt Gunnar Svensson

1309

Electrical Characteristics of 4H-SiC pn Diode Grown by LPE Method

Authors: N.I. Kuznetsov, D. Bauman, A. Gavrilin, Evgenia V. Kalinina

1313

Highly-Doped Implanted pn Junction for SiC Zener Diode Fabrication

Authors: Philippe Godignon, Xavier Jordá, Roberta Nipoti, G.C. Cardinali, Narcis Mestres

1317