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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393

Materials Science Forum Vols. 389-393

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393

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Paper Title Page

5.0 kV 4H-SiC SEMOSFET with Low RonS of 88 m Ω cm²

Authors: Yoshitaka Sugawara, Katsunori Asano, Daisuke Takayama, Sei Hyung Ryu, R. Singh, John W. Palmour, Toshihiko Hayashi

1199

Fabrication and Initial Characterization of 4H-SiC Epilayer Channel MOSFETs

Authors: Masayuki Imaizumi, Yoichiro Tarui, Hiroshi Sugimoto, Kenichi Ohtsuka, Tetsuya Takami, Tatsuo Ozeki

1203

Optimized P-Well Profile Preventing Punch-Through for 4H-SiC Power MOSFETs

Authors: Yoshio Shimoida, Saichirou Kaneko, Hideaki Tanaka, Masakatsu Hoshi

1207

SiC Vertical DACFET (Vertical Delta-Doped Accumulation Channel MOSFET)

Authors: Osamu Kusumoto, Toshiya Yokogawa, Kenya Yamashita, Kunimasa Takahashi, Makoto Kitabatake, Masao Uchida, Ryouko Miyanaga

1211

4H- and 6H-SiC MOSFETs Fabricated on Sloped Sidewalls Formed by Molten KOH Etching

Authors: Qamar-ul Wahab, Hajime Kosugi, Hiroshi Yano, Christer Hallin, Tsunenobu Kimoto, Hiroyuki Matsunami

1215

A 600 V SiC Trench JFET

Authors: R.N. Gupta, H.R. Chang, E. Hanna, C. Bui

1219

A Novel High-Voltage Normally-Off 4H-SiC Vertical JFET

Authors: Jian Hui Zhao, Larry X. Li, Kiyoshi Tone, Peter Alexandrov, M. Pan, M. Weiner

1223

2 kV 4H-SiC Junction FETs

Authors: Hidekatsu Onose, Atsuo Watanabe, Tomoyuki Someya, Yutaka Kobayashi

1227

Design and Processing of High-Voltage 4H-SiC Trench Junction Field-Effect Transistor

Authors: Lin Zhu, T. Paul Chow

1231

Influence of Trenching Effect on the Characteristics of Buried-Gate SiC Junction Field-Effect Transistors

Authors: Sang-Mo Koo, Sang Kwon Lee, Carl Mikael Zetterling, Mikael Östling, Urban Forsberg, Erik Janzén

1235