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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393

Materials Science Forum Vols. 389-393

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393

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Paper Title Page

Unipolar and Bipolar SiC Integral Cascoded Switches with MOS and Junction Gate - Simulation Study

Authors: Mietek Bakowski, U. Gustafsson

1321

All-SiC Inductively-Loaded Half-Bridge Inverter Characterization of 4H-SiC Power BJTs up to 400V/22 A

Authors: Yan Bin Luo, Leonid Fursin, Jian Hui Zhao, Peter Alexandrov, B. Wright, M. Weiner

1325

Improvement and Analysis of Implanted-Emitter Bipolar Junction Transistors in 4H-SiC

Authors: Yi Tang, Jeffery B. Fedison, T. Paul Chow

1329

On the Temperature Coefficient of 4H-SiC npn Transistor Current Gain

Authors: Larry X. Li, Yan Bin Luo, Jian Hui Zhao, Peter Alexandrov, M. Pan, M. Weiner

1333

Investigation of Thermal Properties in Fabricated 4H-SiC High-Power Bipolar Transistors

Authors: Erik Danielsson, Carl Mikael Zetterling, Mikael Östling, Urban Forsberg, Erik Janzén

1337

Hybrid MOS-Gated Bipolar Transistor Using 4H-SiC BJT

Authors: Yi Tang, T. Paul Chow, Anant K. Agarwal, Sei Hyung Ryu, John W. Palmour

1341

A Novel, Planar 3,000 V Normally-Off Field Gated Bipolar Transistor in 4H-SiC

Authors: Larry X. Li, Leonid Fursin, Jian Hui Zhao, Peter Alexandrov, M. Pan, M. Weiner, Terry Burke, G. Khalil

1345

Dynamic Performance of 3.1 kV 4H-SiC Asymmetrical GTO Thyristors

Authors: Anant K. Agarwal, Pavel A. Ivanov, Michael E. Levinshtein, John W. Palmour, Sergey L. Rumyantsev

1349

4H-SiC IMPATT Diode Fabrication and Testing

Authors: Konstantin Vassilevski, A.V. Zorenko, Konstantinos Zekentes, Katerina Tsagaraki, Edwige Bano, C. Banc, Alexander A. Lebedev

1353

Demonstration of IMPATT Diode Oscillators in 4H-SiC

Authors: L. Yuan, James A. Cooper, Kevin J. Webb, M.R. Melloch

1359