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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393

Materials Science Forum Vols. 389-393

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393

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Table of Contents

Paper Title Page

Oxidation of Porous 4H-SiC Substrates

Authors: Stanislav I. Soloviev, Taniya Das, Tangali S. Sudarshan

1113

Advances in SiC Materials and Technology for Schottky Diode Applications

Authors: Lea Di Cioccio, Thierry Billon

1119

Comparison of 4H-SiC pn, Pinch and Schottky Diodes for the 3 kV Range

Authors: Dethard Peters, Peter Friedrichs, Reinhold Schörner, Dietrich Stephani

1125

A JBS Diode with Controlled Forward Temperature Coefficient and Surge Current Capability

Authors: Fanny Dahlquist, H. Lendenmann, Mikael Östling

1129

Impact of Material Defects on SiC Schottky Barrier Diodes

Authors: D.T. Morisette, James A. Cooper

1133

A Comparative Study of the Electrical Properties of 4H-SiC Epilayers with Continuous and Dissociated Micropipes

Authors: Isaho Kamata, Hidekazu Tsuchida, Tamotsu Jikimoto, Kunikaza Izumi

1137

Analysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current Measurements

Authors: Takashi Tsuji, Syunsuke Izumi, A. Ueda, Hiroyuki Fujisawa, Katsunori Ueno, Hidekazu Tsuchida, Isaho Kamata, Tamotsu Jikimoto, Kunikaza Izumi

1141

4H-SiC Schottky Diodes with High On/Off Current Ratio

Authors: Konstantin Vassilevski, Alton B. Horsfall, C. Mark Johnson, Nicolas G. Wright, Anthony G. O'Neill

1145

Optimisation of Implanted Guard-Ring Terminations in 4H-SiC Schottky Diodes

Authors: Alton B. Horsfall, Konstantin Vassilevski, C. Mark Johnson, Nicolas G. Wright, Anthony G. O'Neill, Russell Gwilliam

1149

Performance of 4H-SiC Schottky Diodes with Al-Doped p-Guard-Ring Junction Termination at Reverse Bias

Authors: Hans Peter Felsl, Gerhard Wachutka

1153