Materials Science Forum Vols. 389-393

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393

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Paper Title Page

X-Ray Photoelectron Spectroscopy Studies of Post-Oxidation Process Effects on Oxide/SiC Interfaces

Authors: Yasuto Hijikata, Hiroyuki Yaguchi, Masahito Yoshikawa, Sadafumi Yoshida

1033

SIMS Analyses of SiO₂/4H-SiC(0001) Interface

Authors: Kenya Yamashita, Makoto Kitabatake, Osamu Kusumoto, Kunimasa Takahashi, Masao Uchida, Ryouko Miyanaga, Hisayoshi Itoh, Masahito Yoshikawa

1037

Hall Measurements of Inversion and Accumulation-Mode 4H-SiC MOSFETs

Authors: K. Chatty, S. Banerjee, T. Paul Chow, Ronald J. Gutmann, Emil Arnold, Dev Alok

1041

Correlation between Inversion Channel Mobility and Interface Traps near the Conduction Band in SiC MOSFETs

Authors: Seiji Suzuki, Shinsuke Harada, Ryouji Kosugi, Junji Senzaki, Kenji Fukuda

1045

Influence of the Wet Re-Oxidation Procedure on Inversion Mobility of 4H-SiC MOSFETs

Authors: Ryouji Kosugi, Mitsuo Okamoto, Seiji Suzuki, Junji Senzaki, Shinsuke Harada, Kenji Fukuda, Kazuo Arai

1049

Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs

Authors: Kazutoshi Kojima, Toshiyuki Ohno, Seiji Suzuki, Junji Senzaki, Shinsuke Harada, Kenji Fukuda, Mitsuhiro Kushibe, Koh Masahara, Yuuki Ishida, Sadafumi Yoshida, Tetsuo Takahashi, Takaya Suzuki, Tomoyuki Tanaka, Kazuo Arai

1053

A Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11-2 0) Face Using H₂ and H₂O Vapor Atmosphere Post-Oxidation Annealing

Authors: Kenji Fukuda, Junji Senzaki, Mitsuhiro Kushibe, Kazutoshi Kojima, Ryouji Kosugi, Seiji Suzuki, Shinsuke Harada, Takaya Suzuki, Tomoyuki Tanaka, Kazuo Arai

1057

Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11-20) Face Using Hydrogen Post-Oxidation Annealing

Authors: Junji Senzaki, Kenji Fukuda, Kazutoshi Kojima, Shinsuke Harada, Ryouji Kosugi, Seiji Suzuki, Takaya Suzuki, Kazuo Arai

1061

4H-SiC MOSFETs on (03-38) Face

Authors: T. Hirao, Hiroshi Yano, Tsunenobu Kimoto, Hiroyuki Matsunami, Hiromu Shiomi

1065

Improved Channel Mobility in Normally-Off 4H-SiC MOSFETs with Buried Channel Structure

Authors: Shinsuke Harada, Seiji Suzuki, Junji Senzaki, Ryouji Kosugi, Kazuhiro Adachi, Kenji Fukuda, Kazuo Arai

1069