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Structural Defects in Electrically Degraded 4H-SiC PiN Diodes
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Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN Diodes
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Optical Emission Microscopy of Structural Defects in 4H-SiC PiN Diodes
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Structure of 2D-Nucleation-Induced Stacking Faults in 6H-SiC
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Theoretical Calculation of Stacking Fault Energies in Silicon Carbide
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A Simple Mapping Method for Elementary Screw Dislocations in Homoepitaxial SiC Layers
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Replication of Defects from 4H-SiC Wafer to Epitaxial Layer
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4H- to 3C-SiC Polytypic Transformation during Oxidation
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Structure of 2D-Nucleation-Induced Stacking Faults...

Structure of 2D-Nucleation-Induced Stacking Faults in 6H-SiC

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

435-438

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.435

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Online since:

April 2002

Authors:

Jin Qiang Liu, Edward M. Sanchez, Marek Skowronski

Keywords:

2-D Nucleation, PVT, Stacking Fault, TEM

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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