Paper Titles

Analysis of Sub-Surface Damage-Induced Threading Dislocations in Physical Vapor Transport Growth of 6H-SiC
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Investigation of Structural Defects during 4H-SiC Schottky Diode Processing by Synchrotron Topography
p.419

Structural Defects in Electrically Degraded 4H-SiC PiN Diodes
p.423

Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN Diodes
p.427

Optical Emission Microscopy of Structural Defects in 4H-SiC PiN Diodes
p.431

Structure of 2D-Nucleation-Induced Stacking Faults in 6H-SiC
p.435

Theoretical Calculation of Stacking Fault Energies in Silicon Carbide
p.439

A Simple Mapping Method for Elementary Screw Dislocations in Homoepitaxial SiC Layers
p.443

Replication of Defects from 4H-SiC Wafer to Epitaxial Layer
p.447

HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Optical Emission Microscopy of Structural Defects...

Optical Emission Microscopy of Structural Defects in 4H-SiC PiN Diodes

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

431-434

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.431

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Online since:

April 2002

Authors:

Augustinas Galeckas, Jan Linnros, Bo Breitholtz

Keywords:

Carrier Recombination, Defect, Diffusion Length, Electroluminescence, Optical Emission Microscopy

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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