Stress Distribution in 2in SiC Wafer Measured by Photoelastic Method
p.403
p.403
Characterization of 2in SiC As-Grown Bulk by SWBXT at SPring-8
p.407
p.407
Observation of 2in SiC Wafer by SWBXT at SPring-8
p.411
p.411
Analysis of Sub-Surface Damage-Induced Threading Dislocations in Physical Vapor Transport Growth of 6H-SiC
p.415
p.415
Investigation of Structural Defects during 4H-SiC Schottky Diode Processing by Synchrotron Topography
p.419
p.419
Structural Defects in Electrically Degraded 4H-SiC PiN Diodes
p.423
p.423
Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN Diodes
p.427
p.427
Optical Emission Microscopy of Structural Defects in 4H-SiC PiN Diodes
p.431
p.431
Structure of 2D-Nucleation-Induced Stacking Faults in 6H-SiC
p.435
p.435
Investigation of Structural Defects during 4H-SiC Schottky Diode Processing by Synchrotron Topography
Abstract:
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Periodical:
Materials Science Forum (Volumes 389-393)
Pages:
419-422
Citation:
Online since:
April 2002
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Сopyright:
© 2002 Trans Tech Publications Ltd. All Rights Reserved
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