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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Stress Distribution in 2in SiC Wafer Measured by...

Stress Distribution in 2in SiC Wafer Measured by Photoelastic Method

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

403-406

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.403

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Online since:

April 2002

Authors:

Makato Sasaki, Youichi Miyanagi, Koji Nakayama, Hiromu Shiomi, Shigehiro Nishino

Keywords:

Photoelastic, Stress Field, Subgrain Boundary

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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