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Reduced Micropipe Density in Boule-Derived 6H-SiC Substrates via H Etching of Seed Crystals
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Stress Distribution in 2in SiC Wafer Measured by Photoelastic Method
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Characterization of 2in SiC As-Grown Bulk by SWBXT at SPring-8
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Observation of 2in SiC Wafer by SWBXT at SPring-8
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Analysis of Sub-Surface Damage-Induced Threading Dislocations in Physical Vapor Transport Growth of 6H-SiC
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Investigation of Structural Defects during 4H-SiC Schottky Diode Processing by Synchrotron Topography
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Structural Defects in Electrically Degraded 4H-SiC PiN Diodes
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Characterization of 2in SiC As-Grown Bulk by SWBXT...

Characterization of 2in SiC As-Grown Bulk by SWBXT at SPring-8

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

407-410

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.407

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Online since:

April 2002

Authors:

Makato Sasaki, Akira Hirai, Toshiyuki Miyanagi, Tomoaki Furusho, Taro Nishiguchi, Hiromu Shiomi, Shigehiro Nishino

Keywords:

Bulk Crystals, Defect, Stress Field, SWBXT

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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