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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Structural Defects in Electrically Degraded 4H-SiC...

Structural Defects in Electrically Degraded 4H-SiC PiN Diodes

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

423-426

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.423

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Online since:

April 2002

Authors:

P.O.Å. Persson, J.M. Molina-Aldareguia, Peder Bergman, Henrik Jacobsson, T.O. Tuomi, W.J. Clegg, Erik Janzén, L. Hultman

Keywords:

Electron Microscopy, Stacking Fault, Structural Defects, Synchrotron Topography

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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