Paper Titles

Structural Defects in Electrically Degraded 4H-SiC PiN Diodes
p.423

Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN Diodes
p.427

Optical Emission Microscopy of Structural Defects in 4H-SiC PiN Diodes
p.431

Structure of 2D-Nucleation-Induced Stacking Faults in 6H-SiC
p.435

Theoretical Calculation of Stacking Fault Energies in Silicon Carbide
p.439

A Simple Mapping Method for Elementary Screw Dislocations in Homoepitaxial SiC Layers
p.443

Replication of Defects from 4H-SiC Wafer to Epitaxial Layer
p.447

4H- to 3C-SiC Polytypic Transformation during Oxidation
p.451

Oxidation-Induced Crystallographic Transformation in Heavily N-Doped 4H-SiC Wafers
p.455

HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Theoretical Calculation of Stacking Fault Energies...

Theoretical Calculation of Stacking Fault Energies in Silicon Carbide

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

439-442

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.439

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Online since:

April 2002

Authors:

Hisaomi Iwata, Ulf Lindefelt, Sven Öberg, Patrick R. Briddon

Keywords:

First-Principle Calculations, Stacking Fault, Stacking Fault Energy (SFE)

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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