Paper Titles

Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN Diodes
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Optical Emission Microscopy of Structural Defects in 4H-SiC PiN Diodes
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Structure of 2D-Nucleation-Induced Stacking Faults in 6H-SiC
p.435

Theoretical Calculation of Stacking Fault Energies in Silicon Carbide
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A Simple Mapping Method for Elementary Screw Dislocations in Homoepitaxial SiC Layers
p.443

Replication of Defects from 4H-SiC Wafer to Epitaxial Layer
p.447

4H- to 3C-SiC Polytypic Transformation during Oxidation
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Oxidation-Induced Crystallographic Transformation in Heavily N-Doped 4H-SiC Wafers
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Investigation of the Relationship between Defects and Electrical Properties of 3C-SiC Epilayers
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393A Simple Mapping Method for Elementary Screw...

A Simple Mapping Method for Elementary Screw Dislocations in Homoepitaxial SiC Layers

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

443-446

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.443

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Online since:

April 2002

Authors:

Seoyong Ha, William M. Vetter, Michael Dudley, Marek Skowronski

Keywords:

Etch Pits, Basal Plane Dislocation (BPD), Dislocation Density, Elementary Screw Dislocations, Epitaxial Layer, KOH Etching, Micropipe, Threading Edge Dislocation

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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