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Optical Emission Microscopy of Structural Defects in 4H-SiC PiN Diodes
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Structure of 2D-Nucleation-Induced Stacking Faults in 6H-SiC
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Theoretical Calculation of Stacking Fault Energies in Silicon Carbide
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A Simple Mapping Method for Elementary Screw Dislocations in Homoepitaxial SiC Layers
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Replication of Defects from 4H-SiC Wafer to Epitaxial Layer
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4H- to 3C-SiC Polytypic Transformation during Oxidation
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Oxidation-Induced Crystallographic Transformation in Heavily N-Doped 4H-SiC Wafers
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Investigation of the Relationship between Defects and Electrical Properties of 3C-SiC Epilayers
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RHEED: A Tool for Structural Investigations of Thin Polytypic SiC Layers
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Replication of Defects from 4H-SiC Wafer to...

Replication of Defects from 4H-SiC Wafer to Epitaxial Layer

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

447-450

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.447

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Online since:

April 2002

Authors:

Toshiyuki Ohno, Hirotaka Yamaguchi, Kazutoshi Kojima, Johji Nishio, Koh Masahara, Yuuki Ishida, Tetsuo Takahashi, Takaya Suzuki, Sadafumi Yoshida

Keywords:

4H-SiC, Basal Plane Dislocation (BPD), Epitaxial Layer, Screw Dislocations, X-Ray Topography

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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