Replication of Defects from 4H-SiC Wafer to Epitaxial Layer
p.447
p.447
4H- to 3C-SiC Polytypic Transformation during Oxidation
p.451
p.451
Oxidation-Induced Crystallographic Transformation in Heavily N-Doped 4H-SiC Wafers
p.455
p.455
Investigation of the Relationship between Defects and Electrical Properties of 3C-SiC Epilayers
p.459
p.459
RHEED: A Tool for Structural Investigations of Thin Polytypic SiC Layers
p.463
p.463
Electron-Irradiation-Induced Amorphization of 6H-SiC by 300 keV Transmission Electron Microscope Equipped with a Field-Emission Gun
p.467
p.467
The Nature and Diffusion of Intrinsic Point Defects in SiC
p.471
p.471
Theoretical Investigation of an Intrinsic Defect in SiC
p.477
p.477
Carbon Interstitials in SiC: A Model for the DII Center
p.481
p.481
RHEED: A Tool for Structural Investigations of Thin Polytypic SiC Layers
Abstract:
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Periodical:
Materials Science Forum (Volumes 389-393)
Pages:
463-466
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Online since:
April 2002
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© 2002 Trans Tech Publications Ltd. All Rights Reserved
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