Oxidation-Induced Crystallographic Transformation in Heavily N-Doped 4H-SiC Wafers

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

455-458

DOI:

10.4028/www.scientific.net/MSF.389-393.455

Citation:

B.J. Skromme et al., "Oxidation-Induced Crystallographic Transformation in Heavily N-Doped 4H-SiC Wafers", Materials Science Forum, Vols. 389-393, pp. 455-458, 2002

Online since:

April 2002

Export:

Price:

$35.00

In order to see related information, you need to Login.