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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Oxidation-Induced Crystallographic Transformation...

Oxidation-Induced Crystallographic Transformation in Heavily N-Doped 4H-SiC Wafers

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

455-458

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.455

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Online since:

April 2002

Authors:

B.J. Skromme, K. Palle, C.D. Poweleit, L.R. Bryant, William M. Vetter, Michael Dudley, K. Moore, T. Gehoski

Keywords:

Crystallographic Transformation, Dimpling, Dislocation, Extended Defects, Heavy Doping, Oxidation, Photoluminescence (PL), Raman Scattering, Schottky Barrier, X-Ray Topography

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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