Materials Science Forum Vols. 389-393

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393

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Table of Contents

Paper Title Page

Liquid-Phase Epitaxial Growth of Heavily Doped Al p-Type Contact Layers for SiC Devices and Resulting Ohmic Contacts

Authors: Alexander Syrkin, Vladimir Dmitriev, O. Kovalenkov, D. Bauman, John Crofton

291

Traveling Self-Confined-Solvent Method: A Novel LPE Growth of 6H-SiC

Authors: Yasushi Asaoka, M. Hiramoto, Nao Yuki Sano, Tsutommu Kaneko

295

Homoepitaxial Growth of 4H-SiC Thin Film Below 1000°C by Microwave Plasma Chemical Vapor Deposition

Authors: Mitsuo Okamoto, Yasunori Tanaka, Ryouji Kosugi, Daisuke Takeuchi, Shinichi Nakashima, Shin Ichi Nishizawa, Kenji Fukuda, Hideyo Okushi, Kazuo Arai

299

In Situ Etching of SiC Wafers in a CVD System Using Oxygen as the Source

Authors: Rong Jun Wang, I. Bhat, T. Paul Chow

303

SiO₂ as Oxygen Source for the Chemical Vapor Transport of SiC

Authors: Christophe Jacquier, Gabriel Ferro, François Cauwet, Yves Monteil

307

Growth of Defect-Free 3C-SiC on 4H- and 6H-SiC Mesas Using Step-Free Surface Heteroepitaxy

Authors: Philip G. Neudeck, J. Anthony Powell, Andrew J. Trunek, X. Huang, Michael Dudley

311

3C-SiC Growth on 6H-SiC (0001) Substrates

Authors: Igor Matko, Bernard Chenevier, M. Audier, Roland Madar, M. Diani, L. Simon, L. Kubler, D. Aubel

315

Heteroepitaxial Growth and Characteristics of 3C-SiC on Large-Diameter Si(001) Substrates

Authors: Hiroyuki Nagasawa, Takamitsu Kawahara, Kuniaki Yagi

319

Comparative Study of Heteroepitaxially and Homoepitaxially Grown 3C-SiC Films

Authors: Tetsuo Takahashi, Yuuki Ishida, Hidekazu Tsuchida, Isaho Kamata, Hajime Okumura, Sadafumi Yoshida, Kazuo Arai

323

Growth of 3C-SiC on Si(100) by LPCVD and Patterning of the Grown Layers

Authors: Andrey Bakin, I. Behrens, A.A. Ivanov, E. Peiner, D. Piester, H.-H. Wehmann, A. Schlachetzki

327