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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393In Situ Analysis of Thermal Oxidation on...

In Situ Analysis of Thermal Oxidation on H-Terminated 4H-SiC Surfaces

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

709-712

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.709

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Online since:

April 2002

Authors:

Tamotsu Jikimoto, Hidekazu Tsuchida, Isaho Kamata, Kunikaza Izumi

Keywords:

Fourier-Transform Infrared Reflection Absorption Spectroscopy (FTIR-RAS), H₂ Annealing, Oxidation

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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