Growth of Polymorphous/Nanocrystalline Silicon Films Deposited by PECVD at 13.56 MHz

Leandro Raniero; Rodrigo Martins; Hugo Águas; S. Zang; Isabel Ferreira; Luís Pereira; Elvira Fortunato; L. Boufendi

doi:10.4028/www.scientific.net/MSF.455-456.532

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Growth of Polymorphous/Nanocrystalline Silicon Films Deposited by PECVD at 13.56 MHz

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Materials Science Forum (Volumes 455-456)

Pages:

532-535

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.455-456.532

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Online since:

May 2004

Authors:

Leandro Raniero, Rodrigo Martins, Hugo Águas, S. Zang, Isabel Ferreira, Luís Pereira, Elvira Fortunato, L. Boufendi

Keywords:

Nanocluster, Nanocrystal, Polymorphous, Semiconductor, Thin Film

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References

[1] P. Roca i Cabarrocas: J. Non Cryst. Solids Vol. 266-269 (2000), p.31.

Google Scholar

[2] J. P. Boeuf, Ph. Belenguer: J. Appl. Phys. Vol. 71 (1992), p.4751.

Google Scholar

[3] B. M. Jelenkovic, A. Gallagher: J. Appl. Phys. Vol. 82 (1997). P. 1546.

Google Scholar

[4] A. Fridman, L. Boufendi, T. Hibid, B. Potapkin, A. Bouchoule: J.A.P. Vol. 79 (1996), p.13030.

Google Scholar

[5] P. Roca i Cabarrocas, P. Gay, A. Hadjadj: J. Vac. Sci. & Technol. A Vol. 14 (1996), p.655.

Google Scholar

[6] P. Cabarrocas, A. Fontcuberta i Morral, Y. Poissant: T. Sol. Films Vol. 403-404 (2002), p.39.

DOI: 10.1016/s0040-6090(01)01656-x

Google Scholar

[7] R. Martins, A. Maçarico, I. Ferreira, J. Fidalgo, E. Fortunato: P. Mag. B. Vol. 76, (1997), p.259.

Google Scholar

[8] T. Sasabayashi, P.K. Song, Y. Shigesato, K. Utsumi, A. Kaijo, A. Mitsui: MRS. Proc Vol 666 (2001), p. F2. 4. 1.

DOI: 10.1557/proc-666-f2.4

Google Scholar