Formation and Characterization of Electric Contacts on CVD Diamond Films Prepared by Ion Implantation

Abstract:

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Diamond layers have a potential application as the highest band-gap semiconductor for electronic devices. One of the major problems is to form electric contact on the diamond surface useful for an electronic device. This paper shows the properties of the contacts formed by the very promising ion implantation technique. The diamond layers were deposited with Microwave Assisted Chemical Vapor Deposition (MW-CVD) equipped with special extra features like High Voltage Bias and Heated Substrate Holder [1]. Phosphoruos ion implantation and gold deposition were used for the contact formation. This technique resulted graphitization the top of the diamond film and intermixing of gold with the graphite or diamond surface. The properties of the contacts were tested with surface conduction characterization methods, and the properties of the contact to diamond interface was investigated with SIMS (Secondary Ion Mass Spectroscopy ) and XPS (X-ray Photoelectron Spectroscopy).

Info:

Periodical:

Materials Science Forum (Volumes 473-474)

Edited by:

J. Gyulai

Pages:

123-128

DOI:

10.4028/www.scientific.net/MSF.473-474.123

Citation:

G. Kovách et al., "Formation and Characterization of Electric Contacts on CVD Diamond Films Prepared by Ion Implantation ", Materials Science Forum, Vols. 473-474, pp. 123-128, 2005

Online since:

January 2005

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Price:

$35.00

[2] 5 0 0 0.

[77] 82 87 92 Binding Energy [eV] Intensity (arb. units) Fig. 2. Gold 4f atomic level of sample #3.

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