Thermal and Solute Transportation Effects during Bridgman Crystal Growth of II-VI Compounds

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The bulk crystal growth of II-VI compounds, such as HgCdTe, CdZnTe etc., is usually carried out by Bridgman and modified Bridgman methods. Optimizing the growth process relies mainly on the understanding of the fundamental problems of solute and thermal transportation principles, which determines the composition segregations and other defects, including point defects, dislocations, precipitates, stacking faults, etc. In the last few years, the present author studied the coupling effects of the convection, thermal and solute transportation phenomena during the growth processes through both theoretical modeling and experimental methods. Several important phenomena, such as effects of ACRT forced convection on the thermal and solute field and the growth interface morphology, the shift of the growth interface due to the solute redistributions, solute segregation behaviors during the growth process, etc, are discussed. Based on these researches, technologies for growing high quality CdZnTe and other II-VI compounds have been developed.

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Periodical:

Materials Science Forum (Volumes 475-479)

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Edited by:

Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie

Pages:

1657-1662

Citation:

W. Q. Jie, "Thermal and Solute Transportation Effects during Bridgman Crystal Growth of II-VI Compounds", Materials Science Forum, Vols. 475-479, pp. 1657-1662, 2005

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January 2005

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$38.00

[1] A. Rogalski: (SPIE Optical Engineering Press, Washington 1994).

[2] W. E. Spicer, J. A. Silberman, I. Lindau, A. B. Chen, A. Sher and J. A. Wilson: J. Vac. Sci. Tech. Vol. 1A (1983), p.1735.

[3] J. K. Furdyna: Proc. SPIE Vol. 409 (1983), p.43.

[4] Jie Wanqi: Journal of Chinese Natural Science foundation Vol. 13 (2000), p.92 (in Chinese).

[5] K. Sato, Y. Seki, Y. Matsuda: Journal of Crystal Growth Vol. 197 (1999), p.413.

[6] Jie Wanqi and Guo Xiping: Infrared and Laser Technology Vol. 24 (1995), p.16 (in Chinese).

[7] Xiaohua Liu, Wanqi Jie, Yaohe Zhou: Journal of Crystal Growth Vol. 219 (2000), p.22.

[8] C. W. Lan: Journal of Crystal Growth Vol. 229 (2001), p.595.

[9] P. Capper, W. G. Coates, C. L. Jones, J. J. Gosney, C. K. Ard and I. Kenworthy: J. Crystal Growth Vol. 83 (1987), p.69.

DOI: https://doi.org/10.1016/0022-0248(87)90504-5

[10] P. Capper, J. C. Birce, C. L. Jones, W. G. Coates, J. J. G. Gosney, C. Ard and I. Kenworthy: J. Crystal Growth Vol. 89 (1988), p.171.

[11] P. Capper, J. J. G. Gosney, C. L. Jones and I. Kenworthy: Journal of Electronic Materials Vol. 15 (1986), p.361.

[12] Zhou Yaohe, Hu Zhuangqi, and Jie Wanqi: Solidification Technologies (Mechanical Industry Publication, China 1997) (in Chinese).

[13] Liu Juncheng, Jie Wanqi and Zhou Yaohe: Progress in Natural Science Vol. 7 (1997), p.215.

[14] Xiaohua Liu, Wanqi Jie, Yaohe Zhou: Journal of Crystal Growth Vol. 209 (2000), p.751.

[15] A. B. Bollong, G. T. Proux: Journal of Crystal Growth Vol. 94 (1989), p.475.

[16] J. Steininger, A. J. Strauss, and R. F. Brebrick: J. Electronchem. Soc. Vol. 117 (1970), p.1305.

[17] W. W. Mullins, R. F. Sekerka: Journal of Applied Physics Vol. 34 (1963), p.323.

[18] W. W. Mullins, R. F. Sekerka: Journal of Applied Physics Vol. 35 (1964), p.444.

[19] Jie Wanqi: Journal of Functional Materials Vol. 26 (1995), p.505 (in Chinese).

[20] Jie Wanqi: Chinese Journal of Materials Research Vol. 10 (1996), p.259 (in Chinese).

[21] JIE Wanqi: MA Dong, Journal of Crystal Growth Vol. 156 (1995), p.467.

[22] Liu Xiaohua, Guo Xiping, Jie Wanqi, and Zhou Yaohe: Chinese Journal of Materials Research Vol. 12 (1998), p.123 (in Chinese).

[23] Wanqi Jie, Yujie Li, Xiaohua Liu: Journal of Crystal Growth Vol. 205 (1999), p.510.

[24] Ma Dong, Jie Wanqi: Journal of Crystal Growth Vol. 169 (1996), p.170.

[25] Ma Dong, Jie Wanqi: Acta Physica Sinica, Vol. 5 (1996), p.306 (in Chinese).

[26] JIE Wanqi: Journal of Crystal Growth Vol. 219 (2000), p.379.

[27] J. C. Brice, P. Capper, C. L. Jones, J. J. Gosney: Prog. Crystal Growth and Charact. Vol. 13 (1986), p.197.

[28] Liu Juncheng, Jie Wanqi, Lu Yili, Zhou Yaohe: Chinese Journal of Applied Mechanics Vol. 15 (1998), p.110.