Low Threshold Current Density 1.5 μm Strained-MQW Laser by n-Type Modulation-Doping

Rui-ying Zhang; Wei Wang; Fan Zhou; Jing Bian; Ling-juan Zhao; Hong Liang Zhu; Shui Sheng Jian

doi:10.4028/www.scientific.net/MSF.475-479.1663

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HomeMaterials Science ForumMaterials Science Forum Vols. 475-479Low Threshold Current Density 1.5 μm Strained-MQW...

Low Threshold Current Density 1.5 μm Strained-MQW Laser by n-Type Modulation-Doping

Abstract:

1.5µm n-type modulation-doping InGaAsP/InGaAsP strained multiple quantum wells grown by low pressure metalorganic chemistry vapor decomposition technology is reported for the first time in the world. N-type modulation-doped lasers exhibit much lower threshold current densities than conventional lasers with undoped barrier layers. The lowest threshold current density we obtained was 1052.5 A/cm2 for 1000 µm long lasers with seven quantum wells. The estimated threshold current density for an infinite cavity length was 94.72A/cm2/well, reduced by 23.3% compared with undoped barrier lasers. The n-type modulation doping effects on the lasing characteristics in 1.5µm devices have been demonstrated.

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Materials Science Forum (Volumes 475-479)

Pages:

1663-1668

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.475-479.1663

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Online since:

January 2005

Authors:

Rui-ying Zhang, Wei Wang, Fan Zhou, Jing Bian, Ling-juan Zhao, Hong Liang Zhu, Shui Sheng Jian

Keywords:

1,5μm InGaAsP/InGaAsP, Low Threshold Current Density, n-Type Modulation-Doping MQW

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