Low Threshold Current Density 1.5 μm Strained-MQW Laser by n-Type Modulation-Doping

Abstract:

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1.5µm n-type modulation-doping InGaAsP/InGaAsP strained multiple quantum wells grown by low pressure metalorganic chemistry vapor decomposition technology is reported for the first time in the world. N-type modulation-doped lasers exhibit much lower threshold current densities than conventional lasers with undoped barrier layers. The lowest threshold current density we obtained was 1052.5 A/cm2 for 1000 µm long lasers with seven quantum wells. The estimated threshold current density for an infinite cavity length was 94.72A/cm2/well, reduced by 23.3% compared with undoped barrier lasers. The n-type modulation doping effects on the lasing characteristics in 1.5µm devices have been demonstrated.

Info:

Periodical:

Materials Science Forum (Volumes 475-479)

Main Theme:

Edited by:

Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie

Pages:

1663-1668

DOI:

10.4028/www.scientific.net/MSF.475-479.1663

Citation:

R. Zhang et al., "Low Threshold Current Density 1.5 μm Strained-MQW Laser by n-Type Modulation-Doping", Materials Science Forum, Vols. 475-479, pp. 1663-1668, 2005

Online since:

January 2005

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$35.00

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