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Structural Properties of Sputter-Deposited ZnO Thin Films Depending on the Substrate Materials

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Abstract:

We have demonstrated the growth of ZnO thin films with c-axis orientation at room temperature on various substrates such as Si(100), SiO2, and sapphire by the r.f. magnetron sputtering method. X-ray diffraction (XRD) and scanning electron microscopy altogether indicated that the larger grain size and the higher crystallinity were attained when the ZnO films were deposited on sapphire substrates, compared to the films on Si or SiO2 substrates. The c-axis lattice constant decreased by thermal annealing for the ZnO films deposited on Si or SiO2 substrates, while increased by the thermal annealing for the ZnO films grown on sapphire substrates.

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Periodical:

Materials Science Forum (Volumes 475-479)

Pages:

1825-1828

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.475-479.1825

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Online since:

January 2005

Authors:

Ju Hyun Myung, Nam Ho Kim, Hyoun Woo Kim

Keywords:

Structural Property, Substrate Material, Zinc Oxide (ZnO)

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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