UV-Irradiation-Induced Refractive Index Increase of Ge-Doped Silica Films

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Ge-doped silica glass films were fabricated on Si (100) substrates for core materials of waveguide using flame hydrolysis deposition. Then the films were hydrogen loaded and irradiated to KrF excimer laser. The refractive indices and extinction coefficients of the samples before and after irradiation were determined using M-2000 variable angle incidence spectroscopic ellipsometer (VASE) and obtain the maximum increase about 0.3% at 1550 nm.

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Periodical:

Materials Science Forum (Volumes 475-479)

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Edited by:

Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie

Pages:

1837-1840

Citation:

L. Zhang et al., "UV-Irradiation-Induced Refractive Index Increase of Ge-Doped Silica Films", Materials Science Forum, Vols. 475-479, pp. 1837-1840, 2005

Online since:

January 2005

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$38.00

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