Effect of Pattern Shape on the Crystallization in FALC Process

Abstract:

Article Preview

Considering practical application of field aided lateral crystallization process in channel region of thin film transistors, there might be a different crystallization behavior dependent on the shape of channel to be crystallized. In this study, channel array with various aspect ratios was prepared and the Cu field aided lateral crystallization process was carried out at 500ı for 10 hours with applying 30V/200㎛ through common electrodes for the sake of the actual channel area crystallization. Both the fraction of crystallized area and the degree of crystallization increase as the aspect ratio of channel become away from 1.

Info:

Periodical:

Materials Science Forum (Volumes 475-479)

Main Theme:

Edited by:

Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie

Pages:

1845-1848

DOI:

10.4028/www.scientific.net/MSF.475-479.1845

Citation:

B. S. Kim et al., "Effect of Pattern Shape on the Crystallization in FALC Process", Materials Science Forum, Vols. 475-479, pp. 1845-1848, 2005

Online since:

January 2005

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.