Effect of Pattern Shape on the Crystallization in FALC Process

Byung Soo Kim; Young Bae Kim; Duck Kyun Choi

doi:10.4028/www.scientific.net/MSF.475-479.1845

Paper Titles

Control of Morphology of YBO₃:Eu by a Mild Hydrothermal Process
p.1829

Simulation of the MOCVD Reactor for ZnO Growth
p.1833

UV-Irradiation-Induced Refractive Index Increase of Ge-Doped Silica Films
p.1837

Investigation of the Optical Properties of CdZnTe by IR Transmission and PL Spectra
p.1841

Effect of Pattern Shape on the Crystallization in FALC Process
p.1845

Fabrication of Glass Mixing Channels and Silicon Detection Cell with 45˚ Mirror Surfaces for the Indophenol Sensing Device
p.1849

Fabrication of Pressure Sensors with Diaphragm by Electro-Chemical Etch-Stop
p.1853

Orientation Distributions of Ferroelectric BLT Films for High-Density Semiconductor Memories
p.1857

Influence of AC-Voltage on the Crystallization of Amorphous Silicon Thin Film during Field Aided Lateral Crystallization Process
p.1861

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Effect of Pattern Shape on the Crystallization in FALC Process

Abstract:

Considering practical application of field aided lateral crystallization process in channel region of thin film transistors, there might be a different crystallization behavior dependent on the shape of channel to be crystallized. In this study, channel array with various aspect ratios was prepared and the Cu field aided lateral crystallization process was carried out at 500ı for 10 hours with applying 30V/200㎛ through common electrodes for the sake of the actual channel area crystallization. Both the fraction of crystallized area and the degree of crystallization increase as the aspect ratio of channel become away from 1.