Orientation Distributions of Ferroelectric BLT Films for High-Density Semiconductor Memories

Abstract:

Issues of ferroelectric high-density memories (>64Mb) indispensable for upcoming ubiquitous era have been on the cell integration less than 0.1um2 and reliabilities. Thus nanoscale control of microstructures of ferroelectric films with large switching polarization has been one of the issues to obtain the uniform electrical properties for realization of high-density memories. In this study the grain orientations and distributions of BT-based films by spin-on coatings were examined by an electron backscatter diffraction (EBSD) technique. Ferroelectric domain characteristics by a piezoresponse force microscope (PFM) were also performed to study the dependence of reliabilities on the grain orientations and distributions.

• Periodical: Materials Science Forum (Volumes 475-479)
• Pages: 1857-1860
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.475-479.1857
• Online since: January 2005
• Authors: B.I. Seo, No Jin Park, Sung Jin Kim, B. Yang, Y.H. Oh, Suk Kyoung Hong
• Keywords: BLT, Electron Backscatter Diffraction (EBSD), Ferroelectric, Film, Memory

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