Magnetoresistive Switch Effect and Its Application to Magnetic Field Sensors

Zhi-gang Sun; Masaki Mizuguchi; Hiroyuki Akinaga

doi:10.4028/www.scientific.net/MSF.475-479.2223

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HomeMaterials Science ForumMaterials Science Forum Vols. 475-479Magnetoresistive Switch Effect and Its Application...

Magnetoresistive Switch Effect and Its Application to Magnetic Field Sensors

Abstract:

Magnetoresistive switch effect (MRS effect) devices containing two gold (Au) electrodes with a gap less than 2 µm were successfully fabricated on semi-insulting GaAs substrates by wet etching method. Huge MRS effect was observed. Magnetoresistance (MR) ratio reached 1,000,000% under the magnetic filed of 1.5 T when the devices were operated just above the threshold voltage. The magnetic field sensitivity at small magnetic fields was significantly improved. MR ratio of more than 1000% was achieved at 0.03 T. A relative high MR ratio of 100,000% under the magnetic filed of 1.5 T was also achieved when the devices operating before the threshold voltage.

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Periodical:

Materials Science Forum (Volumes 475-479)

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2223-2226

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https://doi.org/10.4028/www.scientific.net/MSF.475-479.2223

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Online since:

January 2005

Authors:

Zhi-gang Sun, Masaki Mizuguchi, Hiroyuki Akinaga

Keywords:

Magnetoresistive-Switch Effect, Magnetoresistivity MR, Wet Etching

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