Magnetoresistive Switch Effect and Its Application to Magnetic Field Sensors

Abstract:

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Magnetoresistive switch effect (MRS effect) devices containing two gold (Au) electrodes with a gap less than 2 µm were successfully fabricated on semi-insulting GaAs substrates by wet etching method. Huge MRS effect was observed. Magnetoresistance (MR) ratio reached 1,000,000% under the magnetic filed of 1.5 T when the devices were operated just above the threshold voltage. The magnetic field sensitivity at small magnetic fields was significantly improved. MR ratio of more than 1000% was achieved at 0.03 T. A relative high MR ratio of 100,000% under the magnetic filed of 1.5 T was also achieved when the devices operating before the threshold voltage.

Info:

Periodical:

Materials Science Forum (Volumes 475-479)

Main Theme:

Edited by:

Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie

Pages:

2223-2226

DOI:

10.4028/www.scientific.net/MSF.475-479.2223

Citation:

Z. Sun et al., "Magnetoresistive Switch Effect and Its Application to Magnetic Field Sensors", Materials Science Forum, Vols. 475-479, pp. 2223-2226, 2005

Online since:

January 2005

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Price:

$35.00

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