Magnetoresistive Switch Effect and Its Application to Magnetic Field Sensors
Magnetoresistive switch effect (MRS effect) devices containing two gold (Au) electrodes with a gap less than 2 µm were successfully fabricated on semi-insulting GaAs substrates by wet etching method. Huge MRS effect was observed. Magnetoresistance (MR) ratio reached 1,000,000% under the magnetic filed of 1.5 T when the devices were operated just above the threshold voltage. The magnetic field sensitivity at small magnetic fields was significantly improved. MR ratio of more than 1000% was achieved at 0.03 T. A relative high MR ratio of 100,000% under the magnetic filed of 1.5 T was also achieved when the devices operating before the threshold voltage.
Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie
Z. Sun et al., "Magnetoresistive Switch Effect and Its Application to Magnetic Field Sensors", Materials Science Forum, Vols. 475-479, pp. 2223-2226, 2005