Magnetoresistance and Current-Controlled Electric Transport Properties of Fe-C Film on Si Substrate

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Using pulsed laser deposition we prepared Fex-C1-x films on Si (100) substrates. We show that the lightly Fe-doped amorphous carbon films on Si substrate have large MR at room temperature. At T=300K and B=5T a large positive MR of 138% was found in Fe0.011-C0.989 film. Furthermore, we find that when temperature T<258K, the MR of Fe0.011-C0.989 film on Si substrate is negative and when 258K

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Periodical:

Materials Science Forum (Volumes 475-479)

Main Theme:

Edited by:

Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie

Pages:

2207-2210

DOI:

10.4028/www.scientific.net/MSF.475-479.2207

Citation:

Q.Z. Xue and X. Zhang, "Magnetoresistance and Current-Controlled Electric Transport Properties of Fe-C Film on Si Substrate", Materials Science Forum, Vols. 475-479, pp. 2207-2210, 2005

Online since:

January 2005

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