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Magnetoresistance and Current-Controlled Electric Transport Properties of Fe-C Film on Si Substrate

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Abstract:

Using pulsed laser deposition we prepared Fex-C1-x films on Si (100) substrates. We show that the lightly Fe-doped amorphous carbon films on Si substrate have large MR at room temperature. At T=300K and B=5T a large positive MR of 138% was found in Fe0.011-C0.989 film. Furthermore, we find that when temperature T<258K, the MR of Fe0.011-C0.989 film on Si substrate is negative and when 258K

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Periodical:

Materials Science Forum (Volumes 475-479)

Pages:

2207-2210

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.475-479.2207

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Online since:

January 2005

Authors:

Q.Z. Xue, X. Zhang

Keywords:

Electric Transport, Film, Magnetoresistivity MR

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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