Two kinds of ZnO nanowires with different morphologies and characters were produced on Si (100) using a new PVD approach by heating and oxidizing Zn powders directly without any catalysts. The nanowires have an average diameter of 80nm (deposited at the evaporation source) and 30nm (deposited downstream of the evaporation source) respectively, and are evenly distributed over an area of > 20mm2. The two nanowires have complete different photoluminescence properties. One has a strong green emission (510nm) with a weak UV emission (380nm). The other has a strong and sharp UV emission (385nm), showing the capability for UV laser emitters.