High-Quality Semiconductor Carbon-Doped β-FeSi2 Film Synthesized by MEVVA Ion Implantation

Xiao Na Li; Chuang Dong; Lei Xu

doi:10.4028/www.scientific.net/MSF.475-479.3803

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HomeMaterials Science ForumMaterials Science Forum Vols. 475-479High-Quality Semiconductor Carbon-Doped β-FeSi2...

High-Quality Semiconductor Carbon-Doped β-FeSi₂ Film Synthesized by MEVVA Ion Implantation

Abstract:

Carbon-doped b-FeSi2 films synthesized by ion implantation are investigated with the aim to fabricate high-quality semiconducting b-FeSi2 layer on silicon substrate. According to transmission electron microscopy cross-section observations, carbon-doped films, with homogeneous thickness and smooth b/Si interface, have higher quality than binary Fe-Si films. In particular, annealing at 500 °C ~ 700 °C leads to the formation of a flat and continuous b-type silicide layer. Improved thermal stability of the b phase is also found. Optical emission spectroscopy measurements show that the doping influences only slightly the band gap values.

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Materials Science Forum (Volumes 475-479)

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3803-3806

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https://doi.org/10.4028/www.scientific.net/MSF.475-479.3803

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January 2005

Authors:

Xiao Na Li, Chuang Dong, Lei Xu

Keywords:

Ion Implantation, Optical Property, Silicide, TEM

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