High-Quality Semiconductor Carbon-Doped β-FeSi2 Film Synthesized by MEVVA Ion Implantation
Carbon-doped b-FeSi2 films synthesized by ion implantation are investigated with the aim to fabricate high-quality semiconducting b-FeSi2 layer on silicon substrate. According to transmission electron microscopy cross-section observations, carbon-doped films, with homogeneous thickness and smooth b/Si interface, have higher quality than binary Fe-Si films. In particular, annealing at 500 °C ~ 700 °C leads to the formation of a flat and continuous b-type silicide layer. Improved thermal stability of the b phase is also found. Optical emission spectroscopy measurements show that the doping influences only slightly the band gap values.
Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie
X. N. Li et al., "High-Quality Semiconductor Carbon-Doped β-FeSi2 Film Synthesized by MEVVA Ion Implantation", Materials Science Forum, Vols. 475-479, pp. 3803-3806, 2005