Study of Electronic Structure In Ni3Fe/Al2O3/Ni3Fe Magnetic Tunnel Junction with Various Ferromagnetic Layer Thicknesses

Yuan Zhou; Xiao Fang Bi; Jia Xiang Shang; Hui Bin Xu

doi:10.4028/www.scientific.net/MSF.475-479.3909

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HomeMaterials Science ForumMaterials Science Forum Vols. 475-479Study of Electronic Structure In Ni3Fe/Al2O3/Ni3Fe...

Study of Electronic Structure In Ni₃Fe/Al₂O₃/Ni₃Fe Magnetic Tunnel Junction with Various Ferromagnetic Layer Thicknesses

Abstract:

A series models of Ni3Fe/Al2O3/Ni3Fe magnetic tunnel junction with Al-terminated interfaces have been established for investigating the influence of ferromagnetic layer thickness on the electronic structure, employing first-principle methods based on local spin-density approximation theory. The spin polarization of the interfacial Ni3Fe monolayer shows a maximum value as the thickness of ferromagnetic layer increases. The Al monolayers at the ferromagnetic/insulating interface and the O monolayer in the interior of insulating layer are also studied in terms of the change of spin polarization with the ferromagnetic layer thickness. In addition, we have found that the structure of Ni3Fe monolayer has a great influence on the spin polarization.

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Materials Science Forum (Volumes 475-479)

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3909-3914

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https://doi.org/10.4028/www.scientific.net/MSF.475-479.3909

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January 2005

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Yuan Zhou, Xiao Fang Bi, Jia Xiang Shang, Hui Bin Xu

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Electronic Structure, Layer Thickness, Spin Polarization

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