Electron Holography Characterization of Potential Barrier in a Spin Valve Structure with Nano-Oxide Layers

Y.G. Wang

doi:10.4028/www.scientific.net/MSF.475-479.4077

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HomeMaterials Science ForumMaterials Science Forum Vols. 475-479Electron Holography Characterization of Potential...

Electron Holography Characterization of Potential Barrier in a Spin Valve Structure with Nano-Oxide Layers

Abstract:

The potential barrier at the metal/oxide junction in a specular spin valve structure with nano-oxide layers has been mapped by off-axis electron holography in a field emission gun transmission electron microscope. A potential jump of ~3V across the metal/oxide junction was detected. Presence of the potential barrier confirms formation of metal/insulator/metal structure, which contributes to confinement of conductance electrons with spin polarity characteristic in the key SV structure by the specular reflection of the spin-polarized electrons at the metal/oxide junction and leads to nearly double enhancement of magnetoresistance (MR) ratio from 8% to ~16%.

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Materials Science Forum (Volumes 475-479)

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4077-4080

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https://doi.org/10.4028/www.scientific.net/MSF.475-479.4077

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Online since:

January 2005

Authors:

Y.G. Wang

Keywords:

Giant Magnetoresistance, Holography, Potential Barrier, Spin Valve

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