Electron Holography Characterization of Potential Barrier in a Spin Valve Structure with Nano-Oxide Layers
The potential barrier at the metal/oxide junction in a specular spin valve structure with nano-oxide layers has been mapped by off-axis electron holography in a field emission gun transmission electron microscope. A potential jump of ~3V across the metal/oxide junction was detected. Presence of the potential barrier confirms formation of metal/insulator/metal structure, which contributes to confinement of conductance electrons with spin polarity characteristic in the key SV structure by the specular reflection of the spin-polarized electrons at the metal/oxide junction and leads to nearly double enhancement of magnetoresistance (MR) ratio from 8% to ~16%.
Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie
Y.G. Wang "Electron Holography Characterization of Potential Barrier in a Spin Valve Structure with Nano-Oxide Layers", Materials Science Forum, Vols. 475-479, pp. 4077-4080, 2005