Effects of Annealing Condition on the Preparation of Indium-Tin Oxide (ITO) Thin Films via Sol-Gel Spin Coating Process

Abstract:

Indium tin oxide (ITO) thin films were deposited on glass substrates via sol-gel spin coating process from a mixed solution of Indium (Ⅲ) acetylacetonate and Tin (Ⅳ) iso-propoxide. Then, ITO thin films were fired at 500°C, and then annealed at 500°C for 30 min with the sequential annealing process; Vacuum
N2
Ar/H2, N2
Ar/H2 and Ar/H2 gas. The effects of the different annealing processes on the surface morphologies and sheet resistance of ITO thin films were investigated. Sheet resistance values of ITO thin films treated under Vacuum
N2
Ar/H2, N2
Ar/H2 and Ar/H2 annealing process were 1.25 kohm/sq., 3.18 kohm/sq. and 4.92 kohm/sq., respectively. Actually, the sequential atmosphere gases and non-oxidizing gas, which were used in annealing process influenced the microstructural features or surface morphologies of ITO thin films: grain size and surface roughness. Thus, it was presumed that the sequential annealing condition influenced the densification behavior in the microstructural evolution of ITO thin films.

• Periodical: Materials Science Forum (Volumes 492-493)
• Pages: 325-330
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.492-493.325
• Online since: August 2005
• Authors: Hyun-Woong Han, Young Hoon Yun, Sung Churl Choi
• Keywords: Annealing Process, Sheet Resistance, Sol-Gel Spin Coating, Surface Morphology

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