Microstructure of SiC / TiAl Interface Formed by Solid-State Diffusion Bonding

Abstract:

The microstructure of the solid-state diffusion bonded interfaces of silicon carbide (SiC) and titanium aluminide (TiAl) were investigated. A 100-µm-thick Ti-48at%Al foil was inserted between two SiC specimens and then heat-treated in vacuum. The interfacial microstructure has been analyzed by scanning electron microscopy, electron probe microanalysis and X-ray diffractometry. Four layers of reaction products are formed at the interface by diffusion bonding: a layer of TiC adjacent to SiC followed by a diphase layer of TiC+Ti2AlC, a layer of Ti5Si3CX containing Ti2AlC particles and a layer of TiAl2. However, the TiAl2 layer is formed during cooling. The actual phase sequence at the bonding temperatures of 1573 K and 1673 K are described as SiC/TiC/(TiC+ Ti2AlC)/(Ti5Si3CX+Ti2AlC)/Ti1-XAl1+X/TiAl and SiC/TiC/(TiC+Ti2AlC)/(Ti5Si3CX+Ti2AlC)/Ti5Al11 /Ti1-XAl1+X/TiAl, respectively. The phase sequences are successfully expressed on the basis of the Ti-Al-Si-C quaternary chemical potential diagram.

• Periodical: Materials Science Forum (Volume 502)
• Pages: 461-466
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.502.461
• Online since: December 2005
• Authors: Masakatsu Maeda, Kazuyuki Tenyama, Toshiya Shibayanagi, Masaaki Naka
• Keywords: Chemical Potential Diagram, Interfacial Microstructure, Interfacial Reaction, Silicon Carbide (SiC), Solid-State Diffusion Bonding, Titanium Aluminide

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