Microstructure of SiC / TiAl Interface Formed by Solid-State Diffusion Bonding

Abstract:

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The microstructure of the solid-state diffusion bonded interfaces of silicon carbide (SiC) and titanium aluminide (TiAl) were investigated. A 100-µm-thick Ti-48at%Al foil was inserted between two SiC specimens and then heat-treated in vacuum. The interfacial microstructure has been analyzed by scanning electron microscopy, electron probe microanalysis and X-ray diffractometry. Four layers of reaction products are formed at the interface by diffusion bonding: a layer of TiC adjacent to SiC followed by a diphase layer of TiC+Ti2AlC, a layer of Ti5Si3CX containing Ti2AlC particles and a layer of TiAl2. However, the TiAl2 layer is formed during cooling. The actual phase sequence at the bonding temperatures of 1573 K and 1673 K are described as SiC/TiC/(TiC+ Ti2AlC)/(Ti5Si3CX+Ti2AlC)/Ti1-XAl1+X/TiAl and SiC/TiC/(TiC+Ti2AlC)/(Ti5Si3CX+Ti2AlC)/Ti5Al11 /Ti1-XAl1+X/TiAl, respectively. The phase sequences are successfully expressed on the basis of the Ti-Al-Si-C quaternary chemical potential diagram.

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Periodical:

Edited by:

Masaaki Naka and Toshimi Yamane

Pages:

461-466

DOI:

10.4028/www.scientific.net/MSF.502.461

Citation:

M. Maeda et al., "Microstructure of SiC / TiAl Interface Formed by Solid-State Diffusion Bonding ", Materials Science Forum, Vol. 502, pp. 461-466, 2005

Online since:

December 2005

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$35.00

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