Nanosecond Time Resolution In Situ Optical Reflection and Transmission Measurements during XeF Excimer Laser Interaction with Amorphous Silicon Thin Films
XeF excimer laser-induced melting and recrystallization of amorphous silicon was studied using in-situ online time-resolved reflection and transmission measurements with a nanosecond time resolution. The explosive crystallization was observed for 50nm thick amorphous silicon on SiO2 deposited on non-alkali glass substrate upon 25ns pulse duration of excimer laser. Three distinct regrowth regimes were found using various excimer laser fluences. Scanning electron microscopy, Raman spectroscopy and atomic force microscopy were used to evaluate the excimer laser- irradiated region of the sample. Grain size, surface roughness and melt duration as a function of different laser fluences are also determined.
Wunyuh Jywe, Chieh-Li Chen, Kuang-Chao Fan, R.F. Fung, S.G. Hanson,Wen-Hsiang Hsieh, Chaug-Liang Hsu, You-Min Huang, Yunn-Lin Hwang, Gerd Jäger, Y.R. Jeng, Wenlung Li, Yunn-Shiuan Liao, Chien-Chang Lin, Zong-Ching Lin, Cheng-Kuo Sung and Ching-Huan Tzeng
C. C. Kuo et al., "Nanosecond Time Resolution In Situ Optical Reflection and Transmission Measurements during XeF Excimer Laser Interaction with Amorphous Silicon Thin Films", Materials Science Forum, Vols. 505-507, pp. 337-342, 2006