Microstructure and Electrical Properties of R.F Magnetron Sputtering Derived PZT Thin Films Deposited on Interlayer for Pyroelectric IR Sensor
The PZT thin film was deposited by R.F. Magnetron sputtering with Pb 1.1Zr0.53Ti0.47O3 target. When interlayers were inserted at the between PZT and Pt, The grain growth of the PZT thin films was considerably improved by various interlayers (PbO, TiO2, TiO2/PbO) and had low-processing temperature. Compared to the pure PZT thin films, pyroelectric properties of the PZT thin films inserted by interlayers were relatively measured high value. In particular, PZT thin film deposited on interlayer(PbO) was appeared the best pyroelectric properties (P=189.4μ C/㎠K, FD=12.7×10-6Pa-1/2, FV=0.018㎡/C) respectively. As a result of XPS depth profile analysis, both PZT thin film and interlayers were confirmed as independently existing layer respectively.
Hyung Sun Kim, Yu Bao Li and Soo Wohn Lee
C. H. Park and Y. G. Son, "Microstructure and Electrical Properties of R.F Magnetron Sputtering Derived PZT Thin Films Deposited on Interlayer for Pyroelectric IR Sensor", Materials Science Forum, Vols. 510-511, pp. 1042-1045, 2006