Cyclic-Oxidation of Ti₃SiC₂ and Ti₃AlC₂ between 900 and 1200°C in Air

Abstract:

Using the hot pressing method, the Ti3SiC2 materials having fine and coarse grains were synthesized from TiC0.6 and Si powders, and the Ti3AlC2 materials having fine and coarse grains were also synthesized from TiC0.6 and Al powders. The cyclic oxidation between 900 and 1200oC for 40 hr in air resulted in the formation of an outer TiO2 layer and an inner (TiO2+ amorphous SiO2) mixed layer for Ti3SiC2, and the formation of an outer TiO2 layer and an inner (TiO2+ Al2O3) mixed layer for Ti3AlC2. The effect of the grain size on the cyclic oxidation resistance was not significant.

• Periodical: Materials Science Forum (Volumes 510-511)
• Pages: 422-425
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.510-511.422
• Online since: March 2006
• Authors: Dong Bok Lee, Jae Ho Han, Young Do Kim, Sang Whan Park
• Keywords: Oxidation, Titanium Aluminium Carbide, Titanium Silicon Carbide

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DOI: 10.1149/1.1380256

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