Cell Sensing Margin of Lead-Free (Bi,La)4Ti3O12Thin Film Deposited on MTP Cell Structure in High Density FeRAM Device

J.H. Choi; H.S. Yoo; K.W. Cho; N.K. Kim; S.H. Oh; E.S. Choi; S.J. Yeom; H.J. Sun; S.S. Lee; K.N. Lee; Suk Kyoung Hong; Tae Whan Hong; Il Ho Kim; Sung Lim Ryu; Soon Young Kweon

doi:10.4028/www.scientific.net/MSF.510-511.530

Paper Titles

Formation of Ultra Fine Ferrite and Determination of Critical Strain in the Strain Induced Dynamic Transformation for 0.22C-Mn Steel
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Prediction of Flow Curves and Micro-Structural Evolution in Strain Induced Dynamic Transformation of Low Carbon Steel
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Textures and Mechanical Properties of Melt-Extruded Al-Cu Alloys
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Effect of Electromagnetic Stirring on Orientation Distribution Function of Primary Solid Phase of Al-Cu Alloy
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Cell Sensing Margin of Lead-Free (Bi,La)₄Ti₃O₁₂Thin Film Deposited on MTP Cell Structure in High Density FeRAM Device
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Hydrogen Absorption Kinetics of Ti-Nb-Cr Alloys
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Effects of La₂O₃ on the Piezoelectric Properties of Lead-Free (Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃ Piezoelectric Ceramics
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Quantitative Analysis of Micro-Macro Domain Transition of PNN-PT-PZ(x) System at Higher PZ Content
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Effects of Void Formation within the Pb-Free BGA Solder Balls on the Mechanical Joint Strength
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HomeMaterials Science ForumMaterials Science Forum Vols. 510-511Cell Sensing Margin of Lead-Free...

Cell Sensing Margin of Lead-Free (Bi,La)₄Ti₃O₁₂Thin Film Deposited on MTP Cell Structure in High Density FeRAM Device

Abstract:

A 16Mb 1-transistor /1-capacitor (1T1C) FeRAM device was fabricated with lead-free Bi3.25La0.75Ti3.0O12 (BLT) capacitors. The key integration processes contain a scalable MTP (Merged Top-electrode and Plate-line) cell structure and reliable BLT ferroelectric capacitors. Ferroelectric properties of BLT films were optimized on the newly developed MTP cell structure. BLT films were coated on Pt/IrOx/Ir bottom electrode using sol-gel solutions. The composition of the optimized BLT film was about Bi3.25La0.75Ti3.0O12. The switchable polarization obtained in a 100nm-thick BLT film was about 20 µC/cm2 at the 3 V applied voltage, and the optimized BLT film showed a few fatigue losses about 10% up to 1 × 1011 cycles. The imprint properties of the BLT film were also characterized at 25°C and 90°C operating temperature after 125°C data storage. The average cell signal sensing margin between data "1" and data "0" was measured to be about 900 mV, which is a sufficiently large margin for device operation.