Cell Sensing Margin of Lead-Free (Bi,La)4Ti3O12Thin Film Deposited on MTP Cell Structure in High Density FeRAM Device

Abstract:

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A 16Mb 1-transistor /1-capacitor (1T1C) FeRAM device was fabricated with lead-free Bi3.25La0.75Ti3.0O12 (BLT) capacitors. The key integration processes contain a scalable MTP (Merged Top-electrode and Plate-line) cell structure and reliable BLT ferroelectric capacitors. Ferroelectric properties of BLT films were optimized on the newly developed MTP cell structure. BLT films were coated on Pt/IrOx/Ir bottom electrode using sol-gel solutions. The composition of the optimized BLT film was about Bi3.25La0.75Ti3.0O12. The switchable polarization obtained in a 100nm-thick BLT film was about 20 µC/cm2 at the 3 V applied voltage, and the optimized BLT film showed a few fatigue losses about 10% up to 1 × 1011 cycles. The imprint properties of the BLT film were also characterized at 25°C and 90°C operating temperature after 125°C data storage. The average cell signal sensing margin between data "1" and data "0" was measured to be about 900 mV, which is a sufficiently large margin for device operation.

Info:

Periodical:

Materials Science Forum (Volumes 510-511)

Edited by:

Hyung Sun Kim, Yu Bao Li and Soo Wohn Lee

Pages:

530-533

DOI:

10.4028/www.scientific.net/MSF.510-511.530

Citation:

J.H. Choi et al., "Cell Sensing Margin of Lead-Free (Bi,La)4Ti3O12Thin Film Deposited on MTP Cell Structure in High Density FeRAM Device", Materials Science Forum, Vols. 510-511, pp. 530-533, 2006

Online since:

March 2006

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Price:

$35.00

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