Fabrication of Nanoscale SiC-Based Ceramic Patterns with Near-Zero Residual Layers by Using Imprinting Technique and Reactive Ion Etching
Nano-scale SiC-based ceramic patterns on Si substrates were fabricated via imprint lithography technique by using viscous polyvinylsilane as a ceramic precursor and economic nano-scale master such as CD, followed by pyrolysis at 800oC under nitrogen atmosphere. The thickness of residual layers was controlled by varying the spin-coating conditions (solution concentration, spinning speed) and the patterning conditions (molding pressure). In addition, for the effective removal of the remaining residual layer, the etching kinetics of both polymeric and ceramic patterns was also comparatively studied by Ar or reactive ion etching process.
Hyung Sun Kim, Yu Bao Li and Soo Wohn Lee
K. H. Park et al., "Fabrication of Nanoscale SiC-Based Ceramic Patterns with Near-Zero Residual Layers by Using Imprinting Technique and Reactive Ion Etching", Materials Science Forum, Vols. 510-511, pp. 766-769, 2006