Fabrication of Nanoscale SiC-Based Ceramic Patterns with Near-Zero Residual Layers by Using Imprinting Technique and Reactive Ion Etching

Kyoung Hoon Park; Jun Hong Park; Dong Pyo Kim

doi:10.4028/www.scientific.net/MSF.510-511.766

Paper Titles

Preparation of Activated Carbon Fibers by Chemical Activation Method with Hydroxides
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Preparation of Porous Hydroxyapatite Scaffolds for Bone Tissue Engineering
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Synthesis of Biodegradable β-TCP/PLGA Composites Using Microwave Energy
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Synthesis and Magnetic Properties of Fe/SiO₂ Nanocomposite Powders by the Chemical Vapor Condensation Process
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Fabrication of Nanoscale SiC-Based Ceramic Patterns with Near-Zero Residual Layers by Using Imprinting Technique and Reactive Ion Etching
p.766

Preparation of Silver Metallic Sponge from Macroporous Carbon Template
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Synthesis of Polymeric Precursor for Oxidation-Resistant SiCBN Ceramic Microstructure via Soft Lithography
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Influence of the Cup's Edge Geometry on the Transferred Stresses to the Ball/Cup Interface in all Ceramic THR
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Effect of Pouring Temperature and Holding Time at Semi-Solid Region on the Morphology of Primary Solid Phase in Semi-Solid Slurry
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HomeMaterials Science ForumMaterials Science Forum Vols. 510-511Fabrication of Nanoscale SiC-Based Ceramic...

Fabrication of Nanoscale SiC-Based Ceramic Patterns with Near-Zero Residual Layers by Using Imprinting Technique and Reactive Ion Etching

Abstract:

Nano-scale SiC-based ceramic patterns on Si substrates were fabricated via imprint lithography technique by using viscous polyvinylsilane as a ceramic precursor and economic nano-scale master such as CD, followed by pyrolysis at 800oC under nitrogen atmosphere. The thickness of residual layers was controlled by varying the spin-coating conditions (solution concentration, spinning speed) and the patterning conditions (molding pressure). In addition, for the effective removal of the remaining residual layer, the etching kinetics of both polymeric and ceramic patterns was also comparatively studied by Ar or reactive ion etching process.