The Effects of Oxygen Partial Pressure on Interface States and Ferroelectric Properties of PZT/PbO/Si (MFIS) Structures

Abstract:

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Pt/PZT/PbO/Si with the MFIS structure was deposited on the p-type (100) Si substrate by the r.f. magnetron sputtering method with Pb1.1Zr0.53Ti0.47O3 and PbO targets. From the X-ray photoelectron spectroscopy (XPS) results, we could confirm that the partial pressure ratio during PbO deposition affects the interface condition of PbO/Si and the chemical state of Pb existing at the surface of the PZT thin film. The maximum value of the memory window is 3.0 V under the applied voltage of 9V for Pt/PZT (200 nm 400°C)/PbO (80 nm, 300°C)/Si structures with the PbO buffer layer deposited at the partial pressure of 7:3. From these results, we could assume that the PbO buffer layers play a role of the diffusion barrier between the PZT thin film and the Si substrate as well as the seed layer.

Info:

Periodical:

Materials Science Forum (Volumes 544-545)

Edited by:

Hyungsun Kim, Junichi Hojo and Soo Wohn Lee

Pages:

1077-1080

DOI:

10.4028/www.scientific.net/MSF.544-545.1077

Citation:

C. H. Park et al., "The Effects of Oxygen Partial Pressure on Interface States and Ferroelectric Properties of PZT/PbO/Si (MFIS) Structures", Materials Science Forum, Vols. 544-545, pp. 1077-1080, 2007

Online since:

May 2007

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$35.00

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