Defect Generation in Some Transition-Metal Silicides in Accommodating the Deviation from the Stoichiometric Compositions

Haruyuki Inui; Katsushi Tanaka; Kyosuke Kishida; Shunta Harada

doi:10.4028/www.scientific.net/MSF.561-565.443

Paper Titles

High Temperature Oxidation Behavior of MoSi₂ under Low Pressure Atmosphere
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Phase Equilibria between γ-Fe (A1) and Fe₂Ti Laves (C14) Phases and Microstructure in Fe-Ti-Ni Ternary System at Elevated Temperatures
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Mechanical and Physical Properties of Ni₃Al-Based Alloys with Cr Carbides Dispersion
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Defect Generation in Some Transition-Metal Silicides in Accommodating the Deviation from the Stoichiometric Compositions
p.443

A 21st. Century Perspective on Molybdenum Powder Production by Hydrogen Reduction
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Oxidation Behaviours of MoSi₂ Single Crystal at the Temperatures of 773K and 1473K
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Plastic Deformations in L1₀-Ordered Single Crystals with their c/a Ratios Less than Unity
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Thermoelectric Properties of Ru₂Si₃-Based Chimney-Ladder Phases
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HomeMaterials Science ForumMaterials Science Forum Vols. 561-565Defect Generation in Some Transition-Metal...

Defect Generation in Some Transition-Metal Silicides in Accommodating the Deviation from the Stoichiometric Compositions

Abstract:

The changes in microstructure and defect structure of two different semiconducting transition-metal silicides, ReSi1.75 and Ru2Si3 with ternary alloying of substitutional elements with a valence electron number different from that of the constituent metal have been investigated in order to see if the crystal and defect structures of these silicides and thereby their physical properties can be controlled through defect engineering according to the valence electron counting rule. The Si vacancy concentration and its arrangement can be successfully controlled in ReSi1.75 while the relative magnitude of the metal and silicon subcell dimensions in the chimney-ladder structures can be successfully controlled in Ru2Si3.

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Materials Science Forum (Volumes 561-565)

Pages:

443-446

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.561-565.443

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Online since:

October 2007

Authors:

Haruyuki Inui, Katsushi Tanaka, Kyosuke Kishida, Shunta Harada

Keywords:

Defect Engineering, Defect Structure, Semiconducting Transition-Metal Silicides, Valence Electron Counting Rule

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