The electrical, optical and mechanical properties were investigated for the In-Sn-Zn-O films deposited using ITO and ZnO targets, without substrate heating. Three types of ITO target, which are 90wt.% In2O3 : 10wt.% SnO2, 93wt.% In2O3 : 7wt.% SnO2, and 95wt.% In2O3 : 5wt.% SnO2, were used. The power of DC cathode equipped ITO target was fixed at 70W and the power of RF cathode equipped ZnO target was changed from 20W to 60W. The lowest resistivity (2.95x10-4 2cm) was obtained for the In-Sn-Zn-O films deposited under DC power of 70W of ITO (93wt.% In2O3 : SnO2 7wt.%) and RF power of 40W of ZnO target. It is confirmed that surface uniformity, electrical property, and mechanical durability were improved by introduction of Zn atom for all the ITO targets.